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PBSS4260PANP,115 +BOM

Bipolar (BJT) Transistor Array NPN, PNP 60V 2A 140MHz 510mW Surface Mount 6-HUSON (2x2)

Manufacturer:

Nexperia
Mfr.Part #:

PBSS4260PANP,115
Datasheet:

PBSS4260PANP,115 Datasheet (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

NPN, PNP
Configuration:

Dual
Collector- Emitter Voltage VCEO Max:

60 V
EDA/CAD Models:

Request Free CAD Models for PBSS4260PANP,115

PBSS4260PANP,115 General Description

NPN/PNP low V Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4260PAN. PNP/PNP complement: PBSS5260PAP.

Key Features

Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
High efficiency due to less heat generation
AEC-Q101 qualified

Application

Load switch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN, PNP	Configuration	Dual
Collector- Emitter Voltage VCEO Max	60 V	Collector- Base Voltage VCBO	60 V
Emitter- Base Voltage VEBO	7 V	Collector-Emitter Saturation Voltage	70 mV, 100 mV
Maximum DC Collector Current	2 A	Pd - Power Dissipation	2 W
Gain Bandwidth Product fT	140 MHz, 100 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Continuous Collector Current	2 A
DC Collector/Base Gain hfe Min	290, 170	DC Current Gain hFE Max	430, 250
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	3000
Subcategory	Transistors	Technology	Si
Part # Aliases	934066892115	Unit Weight	0.000254 oz