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RFD14N05LSM +BOM

RFD14N05LSM N-channel MOSFET

Manufacturer:

onsemi
Mfr.Part #:

RFD14N05LSM
Datasheet:

RFD14N05LSM Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for RFD14N05LSM

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RFD14N05LSM General Description

Meet the RFD14N05LSM N-channel power MOSFET, a game-changing component manufactured using the revolutionary MegaFET process. Boasting feature sizes akin to LSI integrated circuits, this MOSFET is engineered for optimal silicon utilization and outstanding performance in a variety of applications. Whether deployed in switching regulators, converters, motor drivers, or relay drivers, the RFD14N05LSM delivers unmatched efficiency and reliability. Its innovative gate oxide design ensures full rated conductance within the 3V-5V gate bias range, enabling seamless on-off power control directly from 5V logic level integrated circuits. Discover the power of true performance with the RFD14N05LSM MOSFET

Key Features

Micropower Operating Voltage
Fully Integrated Power Management
Compact Surface Mount Package

Application

Data Centers
Cloud Computing
Networking

Specifications

Source Content uid	RFD14N05LSM	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	50 V	Drain Current-Max (ID)	14 A
Drain-source On Resistance-Max	0.1 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252AA	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	48 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON