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See Technical Specifications

RFD14N05LSM9A +BOM

N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ

Manufacturer:

onsemi
Mfr.Part #:

RFD14N05LSM9A
Datasheet:

RFD14N05LSM9A Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for RFD14N05LSM9A

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RFD14N05LSM9A General Description

In conclusion, the RFD14N05LSM9A MOSFET sets a new standard for power semiconductors with its cutting-edge MegaFET technology and optimized design. Its versatility and performance make it a preferred choice for designers and engineers looking to enhance the efficiency and reliability of their products. Choose the RFD14N05LSM9A for your next project and experience the difference it can make in your electronic designs

Key Features

175°C Maximum Operating Temp
High Reliability
CMOS Logic Compatible
Low Saturation Current

Application

Smartphone accessories
Home automation
Digital cameras

Specifications

Source Content uid	RFD14N05LSM9A	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	63 Weeks
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	50 V	Drain Current-Max (ID)	14 A
Drain-source On Resistance-Max	0.1 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252AA	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	48 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON