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N-Channel Power MOSFET 50V, 16A, 47mΩ
TO-252-3Manufacturer:
Mfr.Part #:
RFD16N05SM9A
Datasheet:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Reach Compliance Code:
not_compliant
ECCN Code:
EAR99
EDA/CAD Models:
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Featuring a robust design, the RFD16N05SM9A N-channel power MOSFET is engineered for high-power field-effect transistor applications. It offers a high current rating of 16A and a maximum voltage of 50V, coupled with a low on-resistance of 0.047 ohms for optimal power efficiency. The MOSFET's single-element construction and N-channel configuration leverage silicon metal-oxide semiconductor technology to deliver reliable performance and longevity. Packaged in a user-friendly TO-252AA form factor, it ensures easy integration and effective thermal management in diverse power electronics setups
Source Content uid | RFD16N05SM9A | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 40 Weeks |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 50 V | Drain Current-Max (ID) | 16 A |
Drain-source On Resistance-Max | 0.047 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-252AA | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 72 W | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Product Category | MOSFET |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 50 V | Id - Continuous Drain Current | 16 A |
Rds On - Drain-Source Resistance | 47 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 80 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 72 W | Channel Mode | Enhancement |
Series | RFD16N05SM | Fall Time | 30 ns |
Height | 2.39 mm | Length | 6.73 mm |
Product Type | MOSFET | Rise Time | 30 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 55 ns | Typical Turn-On Delay Time | 14 ns |
Width | 6.22 mm | Part # Aliases | RFD16N05SM9A_NL |
Unit Weight | 0.011640 oz |
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