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RFP70N06 +BOM

Item Specification: RFP70N06, N-channel MOSFET

RFP70N06 General Description

One of the key advantages of the RFP70N06 is its gate threshold voltage of 2 to 4 volts, which ensures compatibility with a wide range of control circuits. This flexibility makes it a valuable component for various electronic designs, where precise voltage control is necessary. Furthermore, the fast switching speed of the RFP70N06 enhances its performance in high-frequency applications, enabling reliable operation in demanding environments

Key Features

  • Safe Operating Temperature Range: -40°C to 150°C
  • Input Voltage: 12V DC, Current Limiting
  • High-Speed Logic Compatible; Output Pulldown Resistor
  • Rise/Fall Time: ≤10ns; Output Delay: ≤50ns
  • Operating Temperature Range: -40°C to 150°C; Storage: -55°C to 200°C
  • Supply Voltage: 3.3V ±5% with Load Capacitance

Application

  • RFP70N06 is ideal for power management
  • High efficiency in power circuits
  • Reliable in industrial applications

Specifications

Product Category MOSFET REACH Details
Technology Si Mounting Style Through Hole
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 70 A
Rds On - Drain-Source Resistance 14 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 156 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 150 W Channel Mode Enhancement
Series RFP70N06 Configuration Single
Fall Time 24 ns Height 16.3 mm
Length 10.67 mm Product Type MOSFET
Rise Time 137 ns Factory Pack Quantity 800
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 32 ns
Typical Turn-On Delay Time 10 ns Width 4.7 mm
Part # Aliases RFP70N06_NL Unit Weight 0.068784 oz

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