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See Technical Specifications

RGW60TS65DGC11 +BOM

650V 60A N-Channel IGBT Chip TO-247N Tube

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

RGW60TS65DGC11
Datasheet:

RGW60TS65DGC11 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

650 V
EDA/CAD Models:

Request Free CAD Models for RGW60TS65DGC11

RGW60TS65DGC11 General Description

IGBT Trench Field Stop 650 V 60 A 178 W Through Hole TO-247N

Key Features

Low Collector - Emitter Saturation Voltage
High Speed Switching
Low Switching Loss & Soft Switching
Pb - free Lead Plating ; RoHS Compliant

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	650 V	Collector-Emitter Saturation Voltage	1.5 V
Maximum Gate Emitter Voltage	- 30 V, 30 V	Continuous Collector Current at 25 C	60 A
Pd - Power Dissipation	178 W	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 175 C	Continuous Collector Current Ic Max	60 A
Gate-Emitter Leakage Current	200 nA	Product Type	IGBT Transistors
Factory Pack Quantity	30	Subcategory	IGBTs
Part # Aliases	RGW60TS65D

Service Policies and Others

After-Sales & Settlement Related

Payment

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Shipping & Packing

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Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty

365-Day Product

Quality Guarantee

We promise to provide 365 days quality assurance service for all our products.

Ratings and Reviews

L**n 11/18/2020

Delivery 24 days after order by ukrmail. 30 names of 20 pieces of each only 600. Denominations: 10; 22; 47; 100; 150; 200; 220; 270; 330; 470; 510; 680; 1 k; 2 k; 2 k; 3.3 k; 4.7 k; 5.1 k; 6.8 k; 10 k; 20 k; 47 k; 50 k; 68 k; 100 k; 220 k; 300 k; 470 k; 680 k; 1 m. Selectively checked several pieces in each nominal value-the error is not more than 0,5%, which is good. Purchase satisfied. Thank you seller