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RN1106,LF(CT +BOM
RN1106,LF facilitates simplified circuit design with its built-in bias resistor, offering convenience for electronic assembly
SC-75,SOT-416-
Manufacturer:
Toshiba Semiconductor and Storage
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Mfr.Part #:
RN1106,LF(CT
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Datasheet:
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Transistor Type:
NPN - Pre-Biased
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Current - Collector (Ic) (Max):
100 mA
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Voltage - Collector Emitter Breakdown (Max):
50 V
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Resistor - Base (R1):
4.7 kOhms
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EDA/CAD Models:
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Availability: 6708 PCS
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RN1106,LF(CT General Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM
Specifications
Transistor Type | NPN - Pre-Biased | Current - Collector (Ic) (Max) | 100 mA |
Voltage - Collector Emitter Breakdown (Max) | 50 V | Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms | DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA | Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250 MHz | Power - Max | 100 mW |
Mounting Type | Surface Mount | Base Product Number | RN1106 |
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In Stock: 6,708
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.069 | $0.07 |
200+ | $0.027 | $5.40 |
500+ | $0.026 | $13.00 |
1000+ | $0.026 | $26.00 |
The prices below are for reference only.
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