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See Technical Specifications

RN2306,LF +BOM

Frequency range of 200MHz for high-speed applications

Manufacturer:

Toshiba
Mfr.Part #:

RN2306,LF
Datasheet:

RN2306,LF Datasheet (PDF)
Configuration:

Single
Transistor Polarity:

PNP
Typical Input Resistor:

4.7 kOhms
Typical Resistor Ratio:

0.1
EDA/CAD Models:

Request Free CAD Models for RN2306,LF

Avaq Semiconductor offers the highly versatile and reliable RN2306,LF driver, produced by Toshiba. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the RN2306,LF.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Product Category	Bipolar Transistors - Pre-Biased	Configuration	Single
Transistor Polarity	PNP	Typical Input Resistor	4.7 kOhms
Typical Resistor Ratio	0.1	Mounting Style	SMD/SMT
DC Collector/Base Gain hfe Min	80	Collector- Emitter Voltage VCEO Max	- 50 V
Continuous Collector Current	- 100 mA	Pd - Power Dissipation	100 mW
Series	RN2306	Collector- Base Voltage VCBO	- 50 V
Emitter- Base Voltage VEBO	- 5 V	Height	0.9 mm
Length	2 mm	Maximum DC Collector Current	- 100 mA
Product Type	BJTs - Bipolar Transistors - Pre-Biased	Qualification	AEC-Q101
Factory Pack Quantity	3000	Subcategory	Transistors
Type	PNP Epitaxial Silicon Transistor	Width	1.25 mm
Unit Weight	0.000988 oz