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See Technical Specifications

SI2301-TP +BOM

SI2301-TP belongs to the category of P-channel metal-insulator-semiconductor field-effect transistors

Manufacturer:

Micro Commercial Components (Mcc)
Mfr.Part #:

SI2301-TP
Datasheet:

SI2301-TP Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2301-TP

SI2301-TP General Description

The SI2301-TP is a highly versatile P-channel enhancement-mode FET that offers exceptional performance in a compact package. With a maximum drain-source voltage of -20V and a continuous drain current of -2.3A, this transistor is well-suited for a wide range of low-voltage applications. Its low threshold voltage of -1.5V ensures efficient operation, while the low on-resistance of 0.115 ohms allows for efficient power management and minimized power dissipation

Key Features

Silicon-based solution
Efficient power management
Fast switching speed achieved
Compact SOT-23 package design
Low gate threshold voltage ensured
Rugged performance guaranteed

Application

Medical devices
Automotive applications
Smart appliances

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	2.8 A	Rds On - Drain-Source Resistance	110 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	450 mV
Qg - Gate Charge	14.5 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.25 W
Channel Mode	Enhancement	Series	P-Channel Polarity
Configuration	Single	Forward Transconductance - Min	8 S
Product Type	MOSFET	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Unit Weight	0.000282 oz