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SI2301BDS-T1-E3 +BOM

MOSFET SI2301BDS-T1-E3: Description

Manufacturer:

Vishay Siliconix
Mfr.Part #:

SI2301BDS-T1-E3
Datasheet:

SI2301BDS-T1-E3 Datasheet (PDF)
Series:

TrenchFET®
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

20 V
EDA/CAD Models:

Request Free CAD Models for SI2301BDS-T1-E3

SI2301BDS-T1-E3 General Description

Designed for high performance and efficiency, the SI2301BDS-T1-E3 MOSFET transistor is a game-changer in the world of low voltage, low power applications. With a maximum drain-source voltage of -20V and a continuous drain current of -2.6A, this transistor delivers exceptional power management capabilities for a wide range of portable electronic devices. Its on-state resistance of 100mΩ at a Vgs of -4.5V ensures minimal power dissipation, while its compact SOT-23 package allows for easy integration into space-conscious circuit designs. Weighing a mere 0.02 grams and measuring just 2.9mm x 1.3mm x 1.0mm, the SI2301BDS-T1-E3 is the ideal choice for applications where size and weight are crucial. Additionally, its low threshold voltage of -1.0V enables seamless operation with low voltage control signals, resulting in fast switching speeds and high efficiency in power conversion circuits

Key Features

Halogen-free Option Available

Specifications

Series	TrenchFET®	FET Type	P-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	2.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	100mOhm @ 2.8A, 4.5V	Vgs(th) (Max) @ Id	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 4.5 V	Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	375 pF @ 6 V	Power Dissipation (Max)	700mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SI2301