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SI2301CDS-T1-E3 +BOM
Bulk packaging P Channel Power MOSFET with 20 V voltage rating and 3.1 A current rating
TO-236-3,SC-59,SOT-23-3-
Manufacturer:
Vishay Siliconix
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Mfr.Part #:
SI2301CDS-T1-E3
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Datasheet:
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Series:
TrenchFET®
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
20 V
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EDA/CAD Models:
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SI2301CDS-T1-E3 General Description
P-Channel 20 V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)
Key Features
- Halogen-free according to IEC 61249-2-21 definition
Application
- Power Management
Specifications
Series | TrenchFET® | FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 112mOhm @ 2.8A, 4.5V | Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V | Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 405 pF @ 10 V | Power Dissipation (Max) | 860mW (Ta), 1.6W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | SI2301 |
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In Stock: 6,872
Minimum Order: 1
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