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SI2302CDS-T1-E3 +BOM

SI2302CDS-T1-E3: A MOSFET featuring N-Channel design and 20 volts Drain-to-Source voltage

Manufacturer:

Vishay
Mfr.Part #:

SI2302CDS-T1-E3
Datasheet:

SI2302CDS-T1-E3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2302CDS-T1-E3

SI2302CDS-T1-E3 General Description

Featuring a metal-oxide semiconductor construction, the SI2302CDS-T1-E3 provides efficient switching capabilities for circuits requiring fast response times. Its N-Channel design allows for easy integration into existing electronic systems for improved signal processing

Key Features

Improved reliability features
Compact footprint design
Low electromagnetic radiation

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	2.6 A	Rds On - Drain-Source Resistance	57 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	850 mV
Qg - Gate Charge	3.5 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	710 mW
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	7 ns	Forward Transconductance - Min	13 S
Height	1.45 mm	Length	2.9 mm
Product Type	MOSFET	Rise Time	7 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	30 ns
Typical Turn-On Delay Time	8 ns	Width	1.6 mm
Part # Aliases	SI2302CDS-T1-BE3 SI2302CDS-E3	Unit Weight	0.000282 oz