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See Technical Specifications

SI2302DS,215 +BOM

3-Pin TO-236AB N-Channel MOSFET Transistor in Tape and Reel

Manufacturer:

NXP USA Inc.
Mfr.Part #:

SI2302DS,215
Datasheet:

SI2302DS,215 Datasheet (PDF)
Series:

TrenchMOS™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

20 V
EDA/CAD Models:

Request Free CAD Models for SI2302DS,215

SI2302DS,215 General Description

The SI2302DS is a N-channel MOSFET with a continuous drain current of 3.6A and a drain-source voltage of 20V. It has an on-resistance (Rds) of 0.056ohm and a threshold voltage of 650mV. With a power dissipation of 830mW, this transistor is designed for high-performance applications. It is housed in a SOT-23 case style and has 3 pins for easy connection. The SI2302DS has a maximum operating temperature of 150°C and can function in a wide temperature range from -65°C to +150°C. This surface mount device is ideal for automotive and other industrial applications. Its voltage characteristics include a Vds of 20V, a maximum Vgs of 650mV, and Rds on measurement at 4.5V

Key Features

TrenchMOS™ technology
Very fast switching
Logic level compatible
Subminiature surface mount package.

Specifications

Series	TrenchMOS™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	2.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	85mOhm @ 3.6A, 4.5V	Vgs(th) (Max) @ Id	650mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 4.5 V	Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	230 pF @ 10 V	Power Dissipation (Max)	830mW (Tc)
Operating Temperature	-65°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SI2