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See Technical Specifications

SI2304BDS +BOM

OEMs, CMs ONLY (NO BROKERS)

Manufacturer:

SI
Mfr.Part #:

SI2304BDS
Datasheet:

SI2304BDS Datasheet (PDF)
Launch_date:

Oct 23, 2003
Last_inspection_date:

16 OCT 2022
Supplier_cage_code:

18612
Htsusa:

8541290095
EDA/CAD Models:

Request Free CAD Models for SI2304BDS

SI2304BDS General Description

The SI2304BDS MOSFET is a versatile and reliable component designed for use in a wide range of electronic applications. With a continuous drain current rating of 2.6A and a maximum drain source voltage of 30V, this N channel transistor offers excellent performance and efficiency. The on resistance is measured at 70mohm with a test voltage of 10V, ensuring low power dissipation and high power rating capabilities. Operating within a temperature range of -55°C to +150°C, the SI2304BDS is suitable for use in extreme conditions

Key Features

Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET
100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC

Specifications

place		launch_date	Oct 23, 2003
last_inspection_date	16 OCT 2022	supplier_cage_code	18612
htsusa	8541290095	schedule_b	8541290080
ppap		aec
Taxonomy PathSemiconductor > Diodes, Transistors and Thyristors > FET Transistors > MOSFETs	Start parameter search