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SI2304BDS-T1-GE3 +BOM

SI2304BDS-T1-GE3: A 3-pin SOT-23 transistor, featuring N-channel 30V MOSFET with a current capacity of 2.6A

Manufacturer:

Vishay
Mfr.Part #:

SI2304BDS-T1-GE3
Datasheet:

SI2304BDS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2304BDS-T1-GE3

SI2304BDS-T1-GE3 General Description

For circuit designers looking for a versatile and high-performance transistor, the SI2304BDS-T1-GE3 offers a combination of power, voltage rating, and reliability that is hard to beat. Whether you're working on a small signal project or need a MOSFET for a specific application, this transistor delivers the performance and quality you need. Its halogen-free and RoHS compliant construction also ensures that it meets the latest environmental standards, giving you peace of mind knowing you're using a sustainable component in your designs

Key Features

Halogen-free According to IEC 61249-2-21 Definition |TrenchFET® Power MOSFET |100 % R g Tested |Compliant to RoHS Directive 2002/95/EC

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	2.6 A	Rds On - Drain-Source Resistance	70 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	2.6 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	750 mW
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	15 ns	Height	1.45 mm
Length	2.9 mm	Product Type	MOSFET
Rise Time	12.5 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	19 ns	Typical Turn-On Delay Time	7.5 ns
Width	1.6 mm	Part # Aliases	SI2304BDS-T1-BE3 SI2304BDS-GE3
Unit Weight	0.000282 oz