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See Technical Specifications

SI2305ADS-T1-GE3 +BOM

Describing a MOSFET designed for applications with voltage requirements of up to 8

Manufacturer:

Vishay Siliconix
Mfr.Part #:

SI2305ADS-T1-GE3
Datasheet:

SI2305ADS-T1-GE3 Datasheet (PDF)
Series:

TrenchFET®
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

8 V
EDA/CAD Models:

Request Free CAD Models for SI2305ADS-T1-GE3

SI2305ADS-T1-GE3 General Description

Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-4100mA; Drain Source Voltage, Vds:-8V; On Resistance, Rds(on):0.088ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:-0.8V; Power Dissipation, Pd:960mW ;RoHS Compliant: Yes

Key Features

Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET
100 % Rg Tested

Application

Load Switch
DC/DC Converter

Specifications

Series	TrenchFET®	FET Type	P-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	8 V
Current - Continuous Drain (Id) @ 25°C	5.4A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	40mOhm @ 4.1A, 4.5V	Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 4.5 V	Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	740 pF @ 4 V	Power Dissipation (Max)	960mW (Ta), 1.7W (Tc)
Operating Temperature	-50°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SI2305