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SI2305B-TP +BOM

Transistor with P-MOSFET technology

Manufacturer:

Micro Commercial Components (MCC)
Mfr.Part #:

SI2305B-TP
Datasheet:

SI2305B-TP Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2305B-TP

SI2305B-TP General Description

The SI2305B-TP P-channel MOSFET transistor is a versatile component designed for efficient power management in low voltage applications. With a maximum drain-source voltage of -12V and a continuous drain current of -3A, this transistor offers reliable performance in various switching applications. Its low on-resistance of 0.07 ohms and gate threshold voltage of -0.7V to -2.5V ensure optimal power management and control

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	4.2 A	Rds On - Drain-Source Resistance	80 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	900 mV
Qg - Gate Charge	15 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.4 W
Channel Mode	Enhancement	Series	TrenchFET
Configuration	Single	Fall Time	10 ns
Forward Transconductance - Min	6 S	Product Type	MOSFET
Rise Time	35 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Typical Turn-Off Delay Time	32 ns
Typical Turn-On Delay Time	13 ns	Unit Weight	0.000282 oz