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SI2305DS-T1-E3 +BOM

MOSFET Power Transistor

Manufacturer:

Vishay
Mfr.Part #:

SI2305DS-T1-E3
Datasheet:

SI2305DS-T1-E3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Tradename:

TrenchFET
Series:

SI2
EDA/CAD Models:

Request Free CAD Models for SI2305DS-T1-E3

SI2305DS-T1-E3 General Description

Featuring a low threshold voltage of -1 to -2.5V, the SI2305DS-T1-E3 allows for easy control and triggering of the transistor, making it ideal for both experienced engineers and beginners. The compact SOT-23 package adds to its appeal, especially in space-constrained applications where size and weight are crucial considerations. Additionally, the MOSFET has a maximum operating temperature of 150°C, guaranteeing its reliability and stability in various working conditions

Key Features

SI2305DS-T1-E3 is a high-reliability P-channel MOSFET transistor with low noise characteristics
With low on-resistance of 0.15 ohms and max continuous drain current of 6A
Suitable for use in industrial control, automotive, and consumer electronics applications

Application

Efficient power management solution
Perfect for portable electronics
Low on-state resistance design

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Tradename	TrenchFET
Series	SI2	Product Type	MOSFET
Factory Pack Quantity	3000	Subcategory	MOSFETs
Part # Aliases	SI2305DS-E3	Unit Weight	0.000282 oz