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SI2308DS-T1-E3 +BOM

SI2308DS Series 60 V 0.15 Ohm 10 nC N-Channel Surface Mount Mosfet - SOT-23

Manufacturer:

Vishay Siliconix
Mfr.Part #:

SI2308DS-T1-E3
Datasheet:

SI2308DS-T1-E3 Datasheet (PDF)
Series:

TrenchFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
EDA/CAD Models:

Request Free CAD Models for SI2308DS-T1-E3

SI2308DS-T1-E3 General Description

The SI2308DS-T1-E3 MOSFET transistor is a versatile component with a voltage rating of 60V and a continuous current rating of 2A. Its low on-resistance of 0.16ohm and gate threshold voltage of 3V make it ideal for power management applications. The device is packaged in a SOT-23 case style with SMD termination, allowing for easy surface mounting on circuit boards. With a power dissipation of 1.25W, this transistor can handle high-power loads while maintaining efficiency. The reel packaging includes 3000 units, making it convenient for large-scale production

Key Features

- TrenchFET? MOSFET (Metal Oxide)
- Maximum drain-to-source voltage of 60V
- Maximum gate-to-source voltage of ±20V
- Maximum operating temperature of 150°C (TJ)
- Maximum power dissipation of 1.25W (Ta)
- Maximum gate-to-source threshold voltage of 3V @ 250?A
- Drive voltage of 4.5V and 10V

Specifications

Series	TrenchFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	160mOhm @ 2A, 10V	Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	240 pF @ 25 V	Power Dissipation (Max)	1.25W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SI2308