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SI2309CDS-T1-BE3 +BOM

Voltage-controlled switch for high-speed switching operations

P-Channel 60 V 1.2A (Ta), 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

It belongs to the Vishay TrenchFET family, which offers improved power density and efficiency.
The device has a low on-resistance of 04 Ohms, reflecting its ability to handle high currents efficiently.
It has a high continuous drain current rating of 7 Amperes.
The component is made using advanced process technology, resulting in enhanced performance and reliability.
It features low gate drive requirements, making it suitable for low-power applications.
The MOSFET has a compact SOT-23 package, allowing for easy integration into various circuit designs.

The SI2309CDS-T1-BE3 is commonly used in power management circuits.
It can be utilized in battery protection circuits, particularly for overcurrent and short-circuit protection.
The component is suitable for load switches in portable devices like smartphones, tablets, and laptops.
It can be incorporated into various motor control applications, such as robotic systems, drones, and RC vehicles.
The MOSFET is also employed in LED lighting applications, offering efficient power switching for illumination control.

FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	1.2A (Ta), 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	345mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	4.1 nC @ 4.5 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	210 pF @ 30 V
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount