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SI2309CDS-T1-E3 +BOM

Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Manufacturer:

Vishay Siliconix
Mfr.Part #:

SI2309CDS-T1-E3
Datasheet:

SI2309CDS-T1-E3 Datasheet (PDF)
Series:

TrenchFET®
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
EDA/CAD Models:

Request Free CAD Models for SI2309CDS-T1-E3

SI2309CDS-T1-E3 General Description

The SI2309CDS-T1-E3 transistor is a P-channel device with a drain source voltage of 60V and a continuous drain current of 1.2A. It has an on-resistance of 0.285Ohm and is designed for surface mounting. The Rds(On) test voltage is 10V, with a threshold voltage of 3V. Please note that this product is not RoHS compliant. The transistor is manufactured by Vishay and is suitable for a variety of applications where these specifications are necessary

Key Features

None

Application

SWITCHING

Specifications

Series	TrenchFET®	FET Type	P-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	345mOhm @ 1.25A, 10V	Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.1 nC @ 4.5 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	210 pF @ 30 V	Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SI2309