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SI2312BDS-T1-GE3 +BOM
High-performance transistor suitable for various electronic devices
TO-236-3,SC-59,SOT-23-3-
Manufacturer:
Vishay Siliconix
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Mfr.Part #:
SI2312BDS-T1-GE3
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Datasheet:
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Series:
TrenchFET®
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
20 V
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EDA/CAD Models:
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Availability: 9434 PCS
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SI2312BDS-T1-GE3 General Description
Additionally, the MSL (Moisture Sensitivity Level) rating of this transistor is unspecified, meaning careful handling and storage may be necessary to prevent moisture-related damage during transportation and storage
Key Features
- Advanced trench process technology
- High Density Cell Design For Ultra Low On-Resistance
Specifications
Series | TrenchFET® | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 31mOhm @ 5A, 4.5V | Vgs(th) (Max) @ Id | 850mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V | Vgs (Max) | ±8V |
Power Dissipation (Max) | 750mW (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | SI2312 |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 9,434
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
5+ | $0.231 | $1.16 |
50+ | $0.204 | $10.20 |
150+ | $0.192 | $28.80 |
500+ | $0.156 | $78.00 |
3000+ | $0.149 | $447.00 |
6000+ | $0.145 | $870.00 |
The prices below are for reference only.
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