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SI2314EDS-T1-E3 +BOM

SI2314EDS-T1-E3 MOSFET 20V 3.77A

SI2314EDS-T1-E3 General Description

N-Channel 20 V 3.77A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Key Features

  • Halogen-free According to IEC 61249-2-21
  • Available
  • TrenchFET® Power MOSFET
  • ESD Protected: 3000 V
  • APPLICATIONS
  • LI-lon Battery Protection

Specifications

Product Category: MOSFET Technology: Si
Mounting Style: SMD/SMT Transistor Polarity: N-Channel
Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 3.77 A Rds On - Drain-Source Resistance: 33 mOhms
Vgs - Gate-Source Voltage: - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage: 950 mV
Qg - Gate Charge: 11 nC Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 750 mW
Channel Mode: Enhancement Tradename: TrenchFET
Series: SI2 Packaging: MouseReel
Configuration: Single Fall Time: 5.9 us
Forward Transconductance - Min: 40 S Product Type: MOSFET
Rise Time: 1.4 us Factory Pack Quantity: 3000
Subcategory: MOSFETs Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 13.5 us Typical Turn-On Delay Time: 0.53 us
Part # Aliases: SI2314EDS-E3 Unit Weight: 0.000282 oz

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