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SI2318A-TP +BOM

Small-signal N-channel MOSFET suited for low-power applications operating at 40V and 5A maximum ratings in SOT-23 package, supplied on tape and reel

Manufacturer:

Micro Commercial Co
Mfr.Part #:

SI2318A-TP
Datasheet:

SI2318A-TP Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

40 V
Current - Continuous Drain (Id) @ 25°C:

5A (Ta)
EDA/CAD Models:

Request Free CAD Models for SI2318A-TP

SI2318A-TP General Description

The SI2318A-TP is a versatile P-channel Power MOSFET that is ideal for power management applications where efficiency and performance are paramount. With a maximum drain-source voltage of -20 volts and a continuous drain current rating of -2.6 amps, this MOSFET can handle high currents with minimal power dissipation thanks to its low on-resistance of 140 milliohms

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V	Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	1.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	5.4 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	330 pF @ 20 V
Power Dissipation (Max)	1.2W	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	SI2318