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SI2318DS-T1-E3 +BOM

N Channel SOT-23 MOSFET suitable for ROHS applications

SI2318DS-T1-E3 General Description

N-Channel 40 V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Key Features

  • Halogen-free According to IEC 61249-2-21 Available
  • TrenchFET® Power MOSFET

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 3.9 A Rds On - Drain-Source Resistance 45 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 15 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.25 W
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Configuration Single
Fall Time 15 ns Forward Transconductance - Min 11 S
Height 1.45 mm Length 2.9 mm
Product Type MOSFET Rise Time 12 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 20 ns
Typical Turn-On Delay Time 5 ns Width 1.6 mm
Part # Aliases SI2318DS-T1-BE3 SI2318DS-T1 Unit Weight 0.000282 oz

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In Stock: 8,835

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.252 $0.25
10+ $0.218 $2.18
30+ $0.204 $6.12
100+ $0.186 $18.60
500+ $0.177 $88.50
1000+ $0.173 $173.00

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