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SI2318DS-T1-GE3 +BOM

SI2318DS-T1-GE3 comes in tape packaging, not on a reel

SI2318DS-T1-GE3 General Description

N-Channel 40 V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Specifications

Product Category: MOSFET Technology: Si
Mounting Style: SMD/SMT Transistor Polarity: N-Channel
Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 40 V
Id - Continuous Drain Current: 3 A Rds On - Drain-Source Resistance: 45 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 10 nC Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 750 mW
Channel Mode: Enhancement Tradename: TrenchFET
Series: SI2 Packaging: MouseReel
Configuration: Single Fall Time: 15 ns
Height: 1.45 mm Length: 2.9 mm
Product Type: MOSFET Rise Time: 12 ns
Factory Pack Quantity: 3000 Subcategory: MOSFETs
Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 20 ns
Typical Turn-On Delay Time: 5 ns Width: 1.6 mm
Part # Aliases: SI2318DS-T1-BE3 SI2318DS-GE3 Unit Weight: 0.000282 oz

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