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SI2318DS-T1-GE3 +BOM
SI2318DS-T1-GE3 comes in tape packaging, not on a reel
SOT-
Manufacturer:
VISHAY SILICONIX
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Mfr.Part #:
SI2318DS-T1-GE3
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Datasheet:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
N-Channel
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Number Of Channels:
1 Channel
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EDA/CAD Models:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for SI2318DS-T1-GE3, guaranteed quotes back within 12hr.
Availability: 6140 PCS
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SI2318DS-T1-GE3 General Description
N-Channel 40 V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Specifications
Product Category: | MOSFET | Technology: | Si |
Mounting Style: | SMD/SMT | Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel | Vds - Drain-Source Breakdown Voltage: | 40 V |
Id - Continuous Drain Current: | 3 A | Rds On - Drain-Source Resistance: | 45 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage: | 3 V |
Qg - Gate Charge: | 10 nC | Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C | Pd - Power Dissipation: | 750 mW |
Channel Mode: | Enhancement | Tradename: | TrenchFET |
Series: | SI2 | Packaging: | MouseReel |
Configuration: | Single | Fall Time: | 15 ns |
Height: | 1.45 mm | Length: | 2.9 mm |
Product Type: | MOSFET | Rise Time: | 12 ns |
Factory Pack Quantity: | 3000 | Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel | Typical Turn-Off Delay Time: | 20 ns |
Typical Turn-On Delay Time: | 5 ns | Width: | 1.6 mm |
Part # Aliases: | SI2318DS-T1-BE3 SI2318DS-GE3 | Unit Weight: | 0.000282 oz |
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In Stock: 6,140
Minimum Order: 1
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