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SI2319DDS-T1-GE3 +BOM

Small Signal Field-Effect Transistor, 3.6A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Manufacturer:

VISHAY SILICONIX
Mfr.Part #:

SI2319DDS-T1-GE3
Datasheet:

SI2319DDS-T1-GE3 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

68 Weeks
EDA/CAD Models:

Request Free CAD Models for SI2319DDS-T1-GE3

SI2319DDS-T1-GE3 General Description

The SI2319DDS-T1-GE3 power MOSFET from Vishay Siliconix is a versatile component that offers high performance and efficiency in a compact package. With a VDS rating of 20 volts and a low RDS(on) of 20 milliohms, this MOSFET is ideal for a wide range of power management applications, from portable electronics to automotive systems. Its small footprint and low gate charge ensure fast switching speeds and minimal power losses, making it a reliable choice for demanding environments

Key Features

Fast switching speed for efficient energy transfer
Rise and fall times reduced for low EMI
Voltage rating up to -20V for reliable performance
P-channel MOSFET with low on-resistance

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	68 Weeks
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	40 V
Drain Current-Max (ID)	3.6 A	Drain-source On Resistance-Max	0.075 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	43 pF
JEDEC-95 Code	TO-236AB	JESD-30 Code	R-PDSO-G3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	P-CHANNEL	Power Dissipation-Max (Abs)	1.7 W
Surface Mount	YES	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING	Transistor Element Material	SILICON