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SI2323DS-T1-GE3 +BOM
Product Description: 20V P Channel MOSFETs with 3.7A current rating and 39mΩ resistance at 4.5V
SOT-23-3-
Manufacturer:
Vishay
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Mfr.Part #:
SI2323DS-T1-GE3
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Datasheet:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
P-Channel
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Number Of Channels:
1 Channel
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EDA/CAD Models:
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Availability: 8114 PCS
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SI2323DS-T1-GE3 General Description
P-Channel 20 V 3.7A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Key Features
- Efficient Power Conversion
- High Surge Current Capability
- Low EMI and RFI Performance
Application
- Device protection circuits
- Automotive electronics
- Low-power applications
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 4.7 A | Rds On - Drain-Source Resistance | 39 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 12.5 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.25 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Configuration | Single |
Fall Time | 48 ns | Height | 1.45 mm |
Length | 2.9 mm | Product Type | MOSFET |
Rise Time | 43 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 71 ns | Typical Turn-On Delay Time | 25 ns |
Width | 1.6 mm | Part # Aliases | SI2323DS-T1-BE3 SI2323DS-GE3 |
Unit Weight | 0.000282 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 8,114
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.401 | $0.40 |
10+ | $0.332 | $3.32 |
30+ | $0.302 | $9.06 |
100+ | $0.265 | $26.50 |
500+ | $0.248 | $124.00 |
1000+ | $0.239 | $239.00 |
The prices below are for reference only.
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