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See Technical Specifications

SI2324A-TP +BOM

This MOSFET has a low on-state resistance of 250mΩ at 10V and 2A

Manufacturer:

Micro Commercial Co
Mfr.Part #:

SI2324A-TP
Datasheet:

SI2324A-TP Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
Current - Continuous Drain (Id) @ 25°C:

2A (Tj)
EDA/CAD Models:

Request Free CAD Models for SI2324A-TP

SI2324A-TP General Description

The SI2324A-TP offers high switching speed and low power consumption, making it the perfect choice for battery-operated devices and other applications where efficiency is key. Whether used in consumer electronics, industrial equipment, or automotive systems, this transistor delivers exceptional performance and reliability. Its versatile capabilities make it an essential component for various electronic circuits and systems

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	2A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	280mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	4.8 nC @ 4.5 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	520 pF @ 15 V
Power Dissipation (Max)	1.2W	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	SI2324