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SI2329DS-T1-GE3 +BOM

MOSFET with -8V Vds and 5V Vgs in SOT-23 package

SI2329DS-T1-GE3 General Description

In summary, the SI2329DS-T1-GE3 is a high-performing P-channel FET that ticks all the right boxes for power management in portable electronic devices. Its combination of high efficiency, compact design, and wide operating temperature range make it a standout choice for engineers looking to optimize power management in their designs

Specifications

Series TrenchFET® FET Type P-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 30mOhm @ 5.3A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 4.5 V Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 1485 pF @ 4 V Power Dissipation (Max) 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number SI2329

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In Stock: 7,790

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.198 $0.20
10+ $0.161 $1.61
30+ $0.145 $4.35
100+ $0.126 $12.60
500+ $0.117 $58.50
1000+ $0.111 $111.00

The prices below are for reference only.

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