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SI2333-TP +BOM

P-Channel 12 V 6A (Tc) 350mW (Tc) Surface Mount SOT-23

SI2333-TP General Description

P-Channel 12 V 6A (Tc) 350mW (Tc) Surface Mount SOT-23

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 12 V
Id - Continuous Drain Current 6 A Rds On - Drain-Source Resistance 28 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 14 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.1 W
Channel Mode Enhancement Series TrenchFET
Configuration Single Fall Time 3 ns
Forward Transconductance - Min 18 S Product Type MOSFET
Rise Time 4 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 7 ns Typical Turn-On Delay Time 4 ns
Unit Weight 0.000282 oz

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