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SI2333CDS-T1-E3 +BOM
SI2333CDS-T1-E3 is a P Channel SOT-23 MOSFET with a voltage rating of 12V and a current rating of 7.1A at 35mΩ resistance
TO-236-3,SC-59,SOT-23-3-
Manufacturer:
Vishay Siliconix
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Mfr.Part #:
SI2333CDS-T1-E3
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Datasheet:
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Series:
TrenchFET®
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
12 V
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EDA/CAD Models:
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SI2333CDS-T1-E3 General Description
P-Channel 12 V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Key Features
- Wide operating temperature range
- High surge current
- Durable and reliable
Specifications
Series | TrenchFET® | FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 12 V |
Current - Continuous Drain (Id) @ 25°C | 7.1A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 35mOhm @ 5.1A, 4.5V | Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 4.5 V | Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 1225 pF @ 6 V | Power Dissipation (Max) | 1.25W (Ta), 2.5W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | SI2333 |
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In Stock: 5,713
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