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SI2333DS-T1-E3 +BOM

The SI2333DS-T1-E3 is a semiconductor device that operates at a voltage level of 12V and can handle currents up to 5.3A

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SI2333DS-T1-E3 General Description

P-Channel 12 V 4.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Key Features

  • Halogen-free According to IEC 61249-2-21 Available
  • TrenchFET® Power MOSFET

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 12 V
Id - Continuous Drain Current 5.3 A Rds On - Drain-Source Resistance 32 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 11.5 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.25 W
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Configuration Single
Fall Time 60 ns Height 1.45 mm
Length 2.9 mm Product Type MOSFET
Rise Time 45 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 72 ns Typical Turn-On Delay Time 25 ns
Width 1.6 mm Part # Aliases SI2333DS-T1-BE3 SI2333DS-T1
Unit Weight 0.000282 oz

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