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SI2333DS-T1-GE3 +BOM

Reel-packaged P-Channel MOSFET transistor in SOT-23 configuration, rated for 12V and 4.1A operations

Manufacturer:

VISHAY SILICONIX
Mfr.Part #:

SI2333DS-T1-GE3
Datasheet:

SI2333DS-T1-GE3 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Not Recommended
Pin Count:

3
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for SI2333DS-T1-GE3

SI2333DS-T1-GE3 General Description

TRANSISTOR 4100 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal

Key Features

Halogen-free According to IEC 61249-2-21 Available
TrenchFET® Power MOSFET

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Not Recommended
Pin Count	3	Reach Compliance Code
ECCN Code	EAR99	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	12 V	Drain Current-Max (Abs) (ID)	4.1 A
Drain Current-Max (ID)	4.1 A	Drain-source On Resistance-Max	0.032 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	300 pF
JEDEC-95 Code	TO-236AB	JESD-30 Code	R-PDSO-G3
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON