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SI2336DS-T1-GE3 +BOM

SOT-23 packaged MOSFET with 30V Vds and 8V Vgs

SI2336DS-T1-GE3 General Description

N-Channel 30 V 5.2A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)

Key Features

  • Halogen-free According to IEC 61249-2-21 Available
  • TrenchFET® Power MOSFET

Specifications

Series TrenchFET® FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 42mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 8 V Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 560 pF @ 15 V Power Dissipation (Max) 1.25W (Ta), 1.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number SI2336

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