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SI2367DS-T1-GE3 +BOM

P-Channel 20 V (D-S) MOSFET

Manufacturer:

VISHAY SILICONIX
Mfr.Part #:

SI2367DS-T1-GE3
Datasheet:

SI2367DS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2367DS-T1-GE3

SI2367DS-T1-GE3 General Description

P-Channel 20 V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Key Features

TrenchFET® power MOSFET

100 % Rg tested

Specifications

Product Category:	MOSFET	Technology:	Si
Mounting Style:	SMD/SMT	Transistor Polarity:	P-Channel
Number of Channels:	1 Channel	Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	3.8 A	Rds On - Drain-Source Resistance:	66 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	9 nC	Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C	Pd - Power Dissipation:	1.7 W
Channel Mode:	Enhancement	Tradename:	TrenchFET
Series:	SI2	Packaging:	MouseReel
Configuration:	Single	Fall Time:	10 ns
Height:	1.45 mm	Length:	2.9 mm
Product Type:	MOSFET	Rise Time:	20 ns
Factory Pack Quantity:	3000	Subcategory:	MOSFETs
Transistor Type:	1 P-Channel	Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	20 ns	Width:	1.6 mm
Part # Aliases:	SI2367DS-T1-BE3 SI2367DS-GE3	Unit Weight:	0.000282 oz
Series	TrenchFET®	FET Type	P-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	3.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	66mOhm @ 2.5A, 4.5V	Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 8 V	Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	561 pF @ 10 V	Power Dissipation (Max)	960mW (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SI2367