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SI2369BDS-T1-GE3 +BOM

MOSFET P-Channel -30V -7.5A 2.5W

SI2369BDS-T1-GE3 General Description

P-Channel 30 V 5.6A (Ta), 7.5A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Key Features

  • High-speed switching capabilities
  • Pulse width modulation controller
  • Silicon carbide based rectifier
  • Fast recovery diode integrated circuit
  • Radar frequency generator module
  • Illumination driver IC for automotive applications

Specifications

Series TrenchFET® Gen IV FET Type P-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 5.6A (Ta), 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.5 nC @ 10 V Vgs (Max) +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds 745 pF @ 15 V Power Dissipation (Max) 1.3W (Ta), 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number SI2369

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