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SI2369DS-T1-BE3 +BOM
Low on-resistance P-channel MOSFET with a 30V rating and 7.6A current capacity
TO-236-3,SC-59,SOT-23-3-
Manufacturer:
Vishay Siliconix
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Mfr.Part #:
SI2369DS-T1-BE3
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Datasheet:
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
30 V
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Current - Continuous Drain (Id) @ 25°C:
5.4A (Ta), 7.6A (Tc)
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EDA/CAD Models:
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SI2369DS-T1-BE3 General Description
P-Channel 30 V 5.4A (Ta), 7.6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Key Features
- Compact surface mount package
- Improved thermal performance
- Silicon-on-sapphire technology
- Integrated MOSFET driver
Specifications
FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V | Current - Continuous Drain (Id) @ 25°C | 5.4A (Ta), 7.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 29mOhm @ 5.4A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 1295 pF @ 15 V |
Power Dissipation (Max) | 1.25W (Ta), 2.5W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
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In Stock: 5,835
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.307 | $0.31 |
200+ | $0.123 | $24.60 |
500+ | $0.118 | $59.00 |
1000+ | $0.116 | $116.00 |
The prices below are for reference only.
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