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SI4134DY-T1-GE3 +BOM

Si4134DY-T1-GE3

  • Manufacturer:

    Vishay Siliconix

  • Mfr.Part #:

    SI4134DY-T1-GE3

  • Datasheet:

    SI4134DY-T1-GE3 Datasheet (PDF) pdf-icon

  • Series:

    TrenchFET®

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain To Source Voltage (Vdss):

    30 V

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

SI4134DY-T1-GE3 General Description

N-Channel 30 V 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

SI4134DY-T1-GE3

Key Features

  • TrenchFET® power MOSFET
  • 100 % Rg and UIS tested
  • Material categorization:
  • for definitions of compliance please see

Specifications

Series TrenchFET® FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 846 pF @ 15 V Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number SI4134

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In Stock: 8,438

Minimum Order: 1

Qty. Unit Price Ext. Price
5+ $0.209 $1.04
50+ $0.183 $9.15
150+ $0.172 $25.80
500+ $0.145 $72.50
2500+ $0.138 $345.00
5000+ $0.134 $670.00

The prices below are for reference only.

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