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Consider using SI8425DB-T1-E1 instead of MOSFET SI8407DB-T2-E1
6-MICROFOOT®CSPManufacturer:
Vishay Siliconix
Mfr.Part #:
SI8407DB-T2-E1
Datasheet:
Series:
TrenchFET®
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
20 V
EDA/CAD Models:
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P-Channel 20 V 5.8A (Ta) 1.47W (Ta) Surface Mount 6-Micro Foot™ (2.4x2)
Series | TrenchFET® | FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 5.8A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 27mOhm @ 1A, 4.5V | Vgs(th) (Max) @ Id | 900mV @ 350µA |
Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V | Vgs (Max) | ±8V |
Power Dissipation (Max) | 1.47W (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | SI8407 |
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