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SI8424CDB-T1-E1 +BOM

SI8424CDB-T1-E1 N-channel MOSFET Transistor; 10 A; 8 V; 4-Pin MICRO FOOT

Manufacturer:

Vishay Siliconix
Mfr.Part #:

SI8424CDB-T1-E1
Datasheet:

SI8424CDB-T1-E1 Datasheet (PDF)
Series:

TrenchFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

8 V
EDA/CAD Models:

Request Free CAD Models for SI8424CDB-T1-E1

SI8424CDB-T1-E1 General Description

The SI8424CDB-T1-E1 is part of the TrenchFET Series, known for its high quality and performance in various electronic applications. This transistor has not been tested for automotive qualification standards but has a Moisture Sensitivity Level (MSL) of MSL 1, indicating that it is suitable for unlimited exposure to moisture

Key Features

None

Application

Mobile computing, smart phones, tablet PCs - Load switch - Low voltage drop switch

Specifications

Series	TrenchFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	8 V
Current - Continuous Drain (Id) @ 25°C	6.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	20mOhm @ 2A, 4.5V	Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 4.5 V	Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	2340 pF @ 4 V	Power Dissipation (Max)	1.1W (Ta), 2.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SI8424