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SI8424DB-T1-E1 +BOM

MOSFET N-CH 8V 12.2A 4MICROFOOT

Manufacturer:

Vishay Siliconix
Mfr.Part #:

SI8424DB-T1-E1
Datasheet:

SI8424DB-T1-E1 Datasheet (PDF)
Series:

TrenchFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

8 V
EDA/CAD Models:

Request Free CAD Models for SI8424DB-T1-E1

SI8424DB-T1-E1 General Description

The SI8424DB-T1-E1 digital isolator is a game-changer in the world of data transmission and signal integrity. With its 4-channel high-speed isolation, this device is perfect for industrial automation, motor control, and power supply applications where reliable communication is crucial. Its maximum data rate of 150 Mbps per channel ensures fast and efficient data transmission, while its low power consumption of only 15mW per channel makes it ideal for portable and energy-efficient devices

Application

Low Threshold Load Switch for Portable Devices - Low Power Consumption - Increased Battery Life |Ultra Low Voltage Load Switch

Specifications

Series	TrenchFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	8 V
Current - Continuous Drain (Id) @ 25°C	12.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	31mOhm @ 1A, 4.5V	Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 5 V	Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	1950 pF @ 4 V	Power Dissipation (Max)	2.78W (Ta), 6.25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SI8424