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SI8802DB-T2-E1 +BOM

Microscopic 8V Vds, 5V Vgs MOSFET in compact 0.8 x 0.8 package

SI8802DB-T2-E1 General Description

N-Channel 8 V 3A (Ta) 500mW (Ta) Surface Mount 4-Microfoot

Key Features

  • None
  • Application

    SWITCHING

    Specifications

    Series TrenchFET® FET Type N-Channel
    Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8 V
    Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
    Rds On (Max) @ Id, Vgs 54mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 700mV @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 6.5 nC @ 4.5 V Vgs (Max) ±5V
    Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount Base Product Number SI8802

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