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See Technical Specifications

SMMBT4403LT1G +BOM

PNP Bipolar Transistor

Manufacturer:

onsemi
Mfr.Part #:

SMMBT4403LT1G
Datasheet:

SMMBT4403LT1G Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for SMMBT4403LT1G

SMMBT4403LT1G General Description

The SMMBT4403LT1G is a PNP transistor optimized for automotive applications, with a collector-emitter voltage of -40V and a transition frequency of 200MHz. Its power dissipation of 225mW and DC collector current of -600mA enable reliable performance in automotive electronic systems, while its compact SOT-23 case style and 3-pin configuration make it easy to integrate into PCB designs with space constraints. The transistor also meets the AEC-Q101 qualification standard, ensuring its suitability for use in automotive environments. With an operating temperature of 150°C and an MSL rating of MSL 1 - Unlimited, the SMMBT4403LT1G is well-equipped to withstand the challenging conditions present in automotive applications

Key Features

Silicon Diodes for High-Current Applications
Compact and Reliable Rectifier Solution
Pb-Free Packaging Available for RoHS Compliance
AEC-Q101 Qualified and PPAP Capable for Automotive Use
Low Forward Voltage Drop for Higher Efficiency
Miniature SOT-23 Package Saves Board Space

Application

SWITCHING

Specifications

Source Content uid	SMMBT4403LT1G	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	3
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8541.21.00.75	Factory Lead Time	57 Weeks
Date Of Intro	1999-01-01	Collector Current-Max (IC)	0.6 A
Collector-Base Capacitance-Max	8.5 pF	Collector-Emitter Voltage-Max	40 V
Configuration	SINGLE	DC Current Gain-Min (hFE)	100
JEDEC-95 Code	TO-236AB	JESD-30 Code	R-PDSO-G3
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	PNP
Power Dissipation Ambient-Max	0.225 W	Power Dissipation-Max (Abs)	0.225 W
Reference Standard	AEC-Q101	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	200 MHz	Turn-off Time-Max (toff)	255 ns
Turn-on Time-Max (ton)	35 ns	VCEsat-Max	0.75 V