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STD10NM65N +BOM

STD10NM65N is a N-channel MOSFET transistor with a voltage rating of 650V and a current rating of 9A

STD10NM65N General Description

N-Channel 650 V 9A (Tc) 90W (Tc) Surface Mount DPAK

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Specifications

Series MDmesh™ II FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 480mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 50 V Power Dissipation (Max) 90W (Tc)
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Base Product Number STD10

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