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STD10PF06-1 +BOM

IPAK-packaged MOSFET transistor capable of handling 10A current at 60V voltage

STD10PF06-1 General Description

Designed for use in audio amplifiers, switch mode power supplies, and motor control applications, the STD10PF06-1 is a high voltage P-channel enhancement mode power field-effect transistor (FET) that offers outstanding performance and reliability. With a maximum drain-source voltage of -60V and a continuous drain current of -0.66A, this FET is capable of meeting the demands of today's electronic systems. Its low on-resistance of 4.5 Ohms and efficient design make it an ideal choice for applications where space is limited. Additionally, the STD10PF06-1 features a low gate threshold voltage of -2V, allowing for easy gate control and efficient switching performance. With a high input capacitance of 1000pF, this FET helps to reduce switching losses and improve overall efficiency, making it a practical solution for a variety of electronic designs. Moreover, the STD10PF06-1 offers reliable operation even under high-temperature conditions, thanks to its junction-to-ambient thermal resistance of 62°C/W. Encased in a TO-252 package, it provides good thermal conductivity and easy mounting on a PCB, further enhancing its suitability for a wide range of applications

Application

SWITCHING

Specifications

Series STripFET™ II FET Type P-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 25 V Power Dissipation (Max) 40W (Tc)
Operating Temperature 175°C (TJ) Mounting Type Through Hole
Base Product Number STD10

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