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STD15NF10 +BOM

N-CHANNEL Silicon Power MOSFET designed for high-power applications, featuring a low Drain-Source On-Resistance of 0

Manufacturer:

stmicroelectronics
Mfr.Part #:

STD15NF10
Datasheet:

STD15NF10 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for STD15NF10

STD15NF10 General Description

DescriptionThis MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.General features■ Exceptional dv/dt capability■ 100% avalanche tested■ Application oriented characterizationApplications■ Switching application

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	23 A	Rds On - Drain-Source Resistance	80 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	70 W
Channel Mode	Enhancement	Series	N-channel STripFET
Configuration	Single	Fall Time	17 ns
Height	2.4 mm	Length	6.6 mm
Product Type	MOSFET	Rise Time	45 ns
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	49 ns	Typical Turn-On Delay Time	60 ns
Width	6.2 mm	Unit Weight	0.011640 oz