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See Technical Specifications

STD16NF06T4 +BOM

N-channel 100V - 0.019Y - 80A - TO-220 - D2PAK - I2PAK

Manufacturer:

STMicroelectronics
Mfr.Part #:

STD16NF06T4
Datasheet:

STD16NF06T4 Datasheet (PDF)
Series:

STripFET™ II
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
EDA/CAD Models:

Request Free CAD Models for STD16NF06T4

STD16NF06T4 General Description

The STD16NF06T4 is an innovative Power MOSFET from STMicroelectronics, representing the cutting-edge of transistor technology. Developed using a specialized strip-based process known as \Single Feature Size™\, this MOSFET showcases superior packing density, resulting in low on-resistance and rugged avalanche characteristics. Additionally, the design requires less critical alignment steps during manufacturing, ensuring remarkable reproducibility and reliability in production

Key Features

High Current Capability
Robust Operation Ensured
Low Loss Performance

Specifications

Series	STripFET™ II	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	70mOhm @ 8A, 10V	Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14.1 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 15 V	Power Dissipation (Max)	40W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	STD16