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See Technical Specifications

STD1NK80ZT4 +BOM

00 V, 1 A, 13 Ohm typ., N-channel SuperMESH Zener protected Power MOSFET within a DPAK package

Manufacturer:

STMicroelectronics
Mfr.Part #:

STD1NK80ZT4
Datasheet:

STD1NK80ZT4 Datasheet (PDF)
Series:

SuperMESH™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

800 V
EDA/CAD Models:

Request Free CAD Models for STD1NK80ZT4

STD1NK80ZT4 General Description

The STD1NK80ZT4 is a high-performance N-channel Power Field-Effect Transistor designed for a wide range of applications. With a voltage rating of 800V and an on-state resistance of 13 ohms, this MOSFET is capable of handling up to 1A of continuous current. Its DPAK package and Zener-protection make it ideal for use in power supplies, motor control, and lighting applications

Key Features

High temperature stability guaranteed
Low input current required
High surge immunity
Absence of thermal runaway

Specifications

Series	SuperMESH™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	1A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	16Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id	4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	7.7 nC @ 10 V	Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	160 pF @ 25 V	Power Dissipation (Max)	45W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	STD1NK80