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STD20NF06T4 +BOM

N-Channel 60 V 24A (Tc) 60W (Tc) Surface Mount DPAK

STD20NF06T4 General Description

With a focus on innovation and excellence, STMicroelectronics has developed the STD20NF06T4 Power MOSFET to meet the growing demands of modern technology. By leveraging their STripFET process, this MOSFET effectively reduces input capacitance and gate charge, making it the ideal solution for primary switches in advanced high-efficiency isolated DC-DC converters for telecom and computer applications

Key Features

  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Low gate charge

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 24 A Rds On - Drain-Source Resistance 32 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 31 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 60 W
Channel Mode Enhancement Qualification AEC-Q101
Series STD20NF06 Configuration Single
Fall Time 8 ns Forward Transconductance - Min 15 S
Height 2.4 mm Length 6.6 mm
Product Type MOSFET Rise Time 30 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 30 ns Typical Turn-On Delay Time 10 ns
Width 6.2 mm Unit Weight 0.011640 oz

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